DocumentCode
758603
Title
Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers
Author
Chen, T.R. ; Zhao, B. ; Eng, L. ; Feng, J. ; Zhuang, Y.H. ; Yariv, A.
Author_Institution
California Inst. of Technol., Pasadena, CA, USA
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
285
Lastpage
287
Abstract
Record low CW threshold currents of 16 μA at room temperature and 21 μA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; quantum well lasers; reflectivity; 16 to 21 muA; CW threshold currents; InGaAs-AlGaAs; SQW lasers; buried heterostructure strained layer; cavity length; cryogenic temperature; high reflectivity coatings; mirror reflectivity; quantum well lasers; room temperature; single quantum well; ultralow threshold;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950176
Filename
375841
Link To Document