Title :
Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors
Author :
Ng, C.H. ; Chew, K.W. ; Chu, S.-F.
Author_Institution :
Mixed Signal Group, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
Abstract :
In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.
Keywords :
MIM structures; capacitors; leakage currents; plasma CVD; semiconductor device breakdown; MIM capacitors; PECVD; SiN; SiON; breakdown field strength; dispersive behavior; electrical characteristic; leakage; linearity; quality factor; Capacitance; Dielectrics; Electric breakdown; Linearity; MIM capacitors; Q factor; Radio frequency; Semiconductor films; Silicon compounds; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815154
