DocumentCode
758614
Title
Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding
Author
Mori, K. ; Tokutome, K. ; Sugou, S.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
284
Lastpage
285
Abstract
Low-threshold room-temperature pulsed operation of InGaAs-InGaAsP multiquantum-well (MQW) lasers (λ≃1.55 μm) on Si substrates is demonstrated. These laser structures were first grown on InP substrates, then bonded at 700°C onto Si substrates with buffer layers. The mesa-stripe broad-area lasers have a threshold current density of 1.7 kA/cm2 (50 μm mesa width, 330 μm cavity length), which is comparable to the value for lasers on InP substrates
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical fabrication; quantum well lasers; silicon; wafer bonding; 1.55 micron; 700 C; InGaAs-InGaAsP; InP; InP substrates; MQW lasers; OEIC; Si; Si substrates; buffer layers; direct bonding; long-wavelength lasers; low-threshold pulsed operation; mesa-stripe broad-area lasers; multiquantum-well lasers; room-temperature operation; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950179
Filename
375842
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