DocumentCode
758627
Title
Low threshold current and high output power operation for 1.5 μm GRINSCH strained MQW laser diode
Author
Kunii, T. ; Matsui, Y. ; Katoh, Y. ; Kamijoh, T.
Author_Institution
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
282
Lastpage
284
Abstract
A low threshold current of 1.8 mA and large slope efficiency of 0.30 mW/mA were obtained using 1.5 μm GRINSCH strained MQW laser diodes. High-temperature operation was confirmed, and the threshold current at 80°C was 5.0 mA with a slope efficiency of 0.18 mW/mA. The device had a short carrier lifetime of less than 1.55 ns
Keywords
carrier lifetime; gradient index optics; optical communication equipment; quantum well lasers; 1.5 micrometre; 1.55 ns; 1.8 mA; 5.0 mA; 80 degC; GRINSCH strained MQW laser diode; carrier lifetime; graded refractive index separate-confinement heterostructure; high output power operation; high-temperature operation; slope efficiency; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950174
Filename
375843
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