Q-band high-efficiency monolithic HEMT power prematch structures

Author

Kasody, R. ; Wang, H. ; Biedenbender, M. ; Callejo, L. ; Dow, G.S. ; Allen, B.R.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

31

Issue

6

fYear

1995

fDate

3/16/1995 12:00:00 AM

Firstpage

505

Lastpage

506

Abstract

Monolithic Q-band high-efficiency prematch structures using 0.15 μm double-heterostructure pseudomorphic AlGaAs-InGaAs-GaAs HEMTs have been designed, fabricated and evaluated. The structures include a 400 μm and an 800 μm gate-width unit, demonstrating power-added efficiency of 41.6% and 37%, respectively, which represents state-of-the-art efficiency performance at this frequency. These building-blocks can be used easily to construct high-power, high-efficiency amplifiers. The circuit design, output power and efficiency performance of the prematch structures are also presented

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; impedance matching; millimetre wave power amplifiers; 0.15 micron; 37 percent; 400 micron; 41.6 percent; 44 GHz; 800 micron; AlGaAs-InGaAs-GaAs; EHF; MM-wave operation; Q-band; circuit design; double-heterostructure pseudomorphic HEMT; high-efficiency prematch structures; high-power amplifiers; monolithic HEMT power prematch structures;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950309

Filename

375856