Title :
Q-band high-efficiency monolithic HEMT power prematch structures
Author :
Kasody, R. ; Wang, H. ; Biedenbender, M. ; Callejo, L. ; Dow, G.S. ; Allen, B.R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
3/16/1995 12:00:00 AM
Abstract :
Monolithic Q-band high-efficiency prematch structures using 0.15 μm double-heterostructure pseudomorphic AlGaAs-InGaAs-GaAs HEMTs have been designed, fabricated and evaluated. The structures include a 400 μm and an 800 μm gate-width unit, demonstrating power-added efficiency of 41.6% and 37%, respectively, which represents state-of-the-art efficiency performance at this frequency. These building-blocks can be used easily to construct high-power, high-efficiency amplifiers. The circuit design, output power and efficiency performance of the prematch structures are also presented
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; impedance matching; millimetre wave power amplifiers; 0.15 micron; 37 percent; 400 micron; 41.6 percent; 44 GHz; 800 micron; AlGaAs-InGaAs-GaAs; EHF; MM-wave operation; Q-band; circuit design; double-heterostructure pseudomorphic HEMT; high-efficiency prematch structures; high-power amplifiers; monolithic HEMT power prematch structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950309
