Title :
Mid-infra-red InGaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates
Author :
Grietens, B. ; Murti, M.R. ; Van Hoof, C. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
3/16/1995 12:00:00 AM
Abstract :
InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors´ diodes exhibit efficient room-temperature emission at 1.9 μm, necessary for optical sensing of water vapour
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; infrared sources; light emitting diodes; molecular beam epitaxial growth; optical sensors; 1.9 micron; GaAs; InGaAs-InAlAs; MBE growth; lattice-mismatched GaAs substrates; light-emitting diodes; mid IR region; mid-infra-red LED; molecular beam epitaxy; optical gas sensing; room-temperature emission; water vapour sensing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950325
