DocumentCode
758732
Title
GaN MESFETs for high-power and high-temperature microwave applications
Author
Shin, M.W. ; Trew, R.J.
Author_Institution
Dept. of Inorg. Mater. Eng., Myong Ji Univ., Kyunggi, South Korea
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
498
Lastpage
500
Abstract
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications
Keywords
III-V semiconductors; digital simulation; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; DC I/V characteristics; GaN; MESFETs; electrical properties; harmonic-balance RF simulator; high-power device; high-temperature operation; microwave applications; small-signal power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950320
Filename
375860
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