DocumentCode
758749
Title
Effect of ion energy on hydrogen diffusion in n- and p-GaAs
Author
Pearton, S.J. ; Abernathy, C.R. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M.
Author_Institution
Florida Univ., Gainesville, FL, USA
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
496
Lastpage
497
Abstract
The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n+ and p+ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the diffusion depths for -150 V acceleration voltage are ~50 and ~100% larger, respectively, in p+- and n+-GaAs compared to 0 V acceleration voltage. The smaller incorporation depths at lower ion energy coincide with much larger peak hydrogen concentrations and higher apparent thermal stability of passivated dopants
Keywords
III-V semiconductors; diffusion; doping profiles; gallium arsenide; hydrogen; ion beam effects; passivation; thermal stability; -150 V; 250 C; 30 min; ECR plasma hydrogenation; GaAs; H diffusion; effective diffusivity; electron cyclotron resonance; ion energy effect; n-type; n+ GaAs; p-type; p+ GaAs; passivated dopants; solubility; thermal stability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950326
Filename
375862
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