• DocumentCode
    758753
  • Title

    Trends in the ultimate breakdown strength of high dielectric-constant materials

  • Author

    McPherson, Joe W. ; Kim, Jinyoung ; Shanware, Ajit ; Mogul, Homi ; Rodriguez, John

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    50
  • Issue
    8
  • fYear
    2003
  • Firstpage
    1771
  • Lastpage
    1778
  • Abstract
    The ultimate breakdown strength Ebd of a dielectric material is found to decrease as the dielectric-constant k increases. A thermochemical description of the ultimate breakdown strength of high-k dielectrics suggests that Ebd should reduce approximately as (k)-12/ over a wide range of dielectric materials while the field-acceleration parameter γ should increase in similar but inverse manner. New time-dependent dielectric breakdown (TDDB) data are presented over a wide range of dielectric materials and Ebd was found to decrease as (k)-0.65 while γ increases as (k)0.66. The good agreement between thermochemical theory and high-k TDDB observations suggests that the very high local electric field (Lorentz-relation/Mossotti-field) in high-k dielectrics tends to distort/weaken the polar molecular bonds making them more susceptible to bond breakage by standard Boltzmann processes and/or by hole-capture and thus lowers the breakdown strength.
  • Keywords
    MIS devices; electric breakdown; electric strength; permittivity; semiconductor device reliability; Boltzmann processes; Lorentz-relation/Mossoffi-field; breakdown strength; field-acceleration parameter; high dielectric-constant materials; local electric field; polar molecular bonds; thermochemical description; time-dependent dielectric breakdown; ultimate breakdown strength; Breakdown voltage; CMOS technology; Capacitors; Dielectric breakdown; Dielectric films; Dielectric materials; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.815141
  • Filename
    1218670