Title :
Dual-channel EST/BRT: a new high-voltage MOS-gated thyristor structure
Author :
Sridhar, S. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
3/16/1995 12:00:00 AM
Abstract :
A new MOS-gated thyristor structure, in which a BRT section is incorporated into the dual-channel EST (DC-EST) to enhance maximum controllable current densities, is presented. This structure has been demonstrated experimentally to have a maximum controllable current density about 2.5 times greater than that of the DC-EST, with only a small increase in the on-state voltage drop
Keywords :
MOS-controlled thyristors; current density; power semiconductor switches; HV device; MOS-gated thyristor structure; base resistence controlled thyristor; dual-channel; high-voltage thyristor; maximum controllable current density; on-state voltage drop;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950300
