DocumentCode
758757
Title
Dual-channel EST/BRT: a new high-voltage MOS-gated thyristor structure
Author
Sridhar, S. ; Baliga, B.J.
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
494
Lastpage
496
Abstract
A new MOS-gated thyristor structure, in which a BRT section is incorporated into the dual-channel EST (DC-EST) to enhance maximum controllable current densities, is presented. This structure has been demonstrated experimentally to have a maximum controllable current density about 2.5 times greater than that of the DC-EST, with only a small increase in the on-state voltage drop
Keywords
MOS-controlled thyristors; current density; power semiconductor switches; HV device; MOS-gated thyristor structure; base resistence controlled thyristor; dual-channel; high-voltage thyristor; maximum controllable current density; on-state voltage drop;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950300
Filename
375863
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