`Flip-chip´ transfer of ZnSSe/ZnSe/CdZnSe LED films

Author

Li, X. ; Tao, I.W. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

31

Issue

6

fYear

1995

fDate

3/16/1995 12:00:00 AM

Firstpage

491

Lastpage

493

Abstract

A ZnSSe/ZnSe/CdZnSe light-emitting diode (LED) film grown on GaAs by molecular beam epitaxy (MBE) has been successfully transferred from a GaAs substrate to a silicon substrate by combining both mechanical polishing and chemical wet etching techniques. The external quantum efficiency of the LED was enhanced by more than a factor of 2 via insertion of a reflector layer beneath the device structure. The device can be implemented in hybrid quasimonolithic integration. Technology applications include fabrication of LEDs with enhanced external quantum efficiency and II-VI surface emitting lasers

Keywords

II-VI semiconductors; cadmium compounds; etching; light emitting diodes; molecular beam epitaxial growth; polishing; semiconductor epitaxial layers; semiconductor growth; semiconductor technology; zinc compounds; GaAs; GaAs substrate; II-VI surface emitting lasers; LED fabrication; LED film growth; MBE; SEL; Si; Si substrate; ZnSSe-ZnSe-CdZnSe; chemical wet etching; external quantum efficiency; flip-chip transfer; hybrid quasimonolithic integration; light-emitting diode film; mechanical polishing; molecular beam epitaxy; reflector layer; substrate transfer;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950344

Filename

375865