DocumentCode
758825
Title
A ridge waveguide DFB laser model including transverse carrier and optical effects
Author
Sarangan, A.M. ; Huang, Wei-Ping ; Makino, Tatsuya
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
Volume
32
Issue
3
fYear
1996
fDate
3/1/1996 12:00:00 AM
Firstpage
408
Lastpage
416
Abstract
In this paper, a steady-state model for ridge waveguide DFB lasers is presented. The complex two-dimensional semivectorial optical mode in the transverse direction is solved using a finite difference scheme without introducing any approximations. The electron and hole diffusion in the lateral direction is also considered, Along the longitudinal direction, a novel “Superposition of Spectral Power Method” is used, based on the coupled mode formulation. This model enables one to examine the interaction between the optical and carrier profiles for different injection levels and arbitrary transverse index profiles. As such, it is useful for studying CW characteristics such as lasing wavelength and threshold current. Finally, the results from this model are compared with experimental data from a varying ridge width laser array fabricated from a 1.55 μm InGaAsP-InP compressively strained multiquantum-well loss-coupled DFB structure
Keywords
III-V semiconductors; coupled mode analysis; distributed feedback lasers; finite difference methods; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; optical losses; quantum well lasers; ridge waveguides; semiconductor laser arrays; semiconductor lasers; waveguide lasers; 1.55 mum; CW characteristics; InGaAsP-InP; arbitrary transverse index profiles; complex two-dimensional semivectorial optical mode; compressively strained multiquantum-well loss-coupled DFB structure; coupled mode formulation; electron diffusion; finite difference scheme; hole diffusion; injection levels; lasing wavelength; lateral direction; longitudinal direction; optical effects; optical profiles; ridge waveguide DFB laser model; spectral power supposition method; steady-state model; threshold current; transverse carrier effects; transverse direction; varying ridge width laser array; Charge carrier processes; Electron optics; Finite difference methods; Laser modes; Optical arrays; Optical waveguides; Semiconductor laser arrays; Steady-state; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.485391
Filename
485391
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