Title :
Interband-resonant light modulation by intersubband-resonant light in undoped quantum wells
Author :
Noda, Susumu ; Ohya, Masaki ; Sakamoto, Takeshi ; Sasaki, Akio
Author_Institution :
Dept. of Electr. Eng., Kyoto Univ., Japan
fDate :
3/1/1996 12:00:00 AM
Abstract :
Interband-resonant light modulation by intersubband-resonant light in undoped quantum wells is investigated. Theoretical calculation for the modulation is carried out by considering not only the excitonic interband-transition but also the continuous level transition between the conduction and valence bands. The modulation characteristics are compared with those of the modulation using n-doped quantum wells. The possibility of the modulation using undoped quantum well is successfully shown by real-time single-shot experiment using Ti-Al2O3 and CO2 lasers for interband- and intersubband-resonant lights at room temperature
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; excitons; gallium arsenide; optical modulation; photoluminescence; semiconductor quantum wells; valence bands; 298 K; Al2O3:Ti; AlGaAs-GaAs; CO2; CO2 lasers; Ti-Al2O3 laser; conduction bands; continuous level transition; excitonic interband-transition; interband-resonant light modulation; intersubband-resonant light; modulation characteristics; n-doped quantum wells; real-time single-shot experiment; room temperature; undoped quantum wells; valence bands; Absorption; Energy states; Fiber nonlinear optics; Laser transitions; Nonlinear optics; Optical modulation; Quantum well lasers; Resonance; Semiconductor lasers; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
