Title :
Producible GaAs-based MOVPE-grown vertical-cavity top-surface emitting lasers with record performance
Author :
Morgan, R.A. ; Hibbs-Brenner, M.K. ; Walterson, R.A. ; Lehman, J.A. ; Marta, T.M. ; Bounnak, S. ; Kalweit, E.L. ; Akinwande, T. ; Nohava, J.C.
Author_Institution :
Technol. Center, Honeywell Inc., Bloomington, MN, USA
fDate :
3/16/1995 12:00:00 AM
Abstract :
The authors present state-of-the-art performance obtained from producible, 850 nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity surface-emitting lasers (VCSELs). Record CW room-temperature device performance includes threshold voltages Vth =1.55 V, submilliamp threshold currents Ith=0.68 mA, unbonded CW output power Pcw=59 mW, total wallplug efficiencies of ηnp=28% and CW lasing to Tcw=200°C. These results were obtained from the same fabrication processes and similar epigrowth designs, which exhibited 99.8% device yield across a 3"-diameter metal organic vapour phase epitaxy (MOVPE)-grown wafer
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 0.68 mA; 1.55 V; 200 C; 28 percent; 59 mW; 850 nm; GaAs-AlGaAs; MOVPE-grown wafer; current-guiding; device yield; epigrowth; fabrication; metal organic vapour phase epitaxy; room-temperature device; threshold currents; threshold voltages; unbonded CW output power; vertical-cavity top-surface emitting lasers; wallplug efficiencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950336
