Title :
InGaAsP/lnP strained MQW laser with integrated mode size converter using the shadow masked growth technique
Author :
Moerman, I. ; D´Hondt, M. ; Vanderbauwhede, W. ; Van Daele, P. ; Demeester, P. ; Hunziker, W.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
fDate :
3/16/1995 12:00:00 AM
Abstract :
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-well (MQW) laser emitting at 1.52 mu m with integrated vertical taper using the shadow masked growth (SMG) technique. The threshold current is 8 mA and the coupling loss to a cleaved single-mode fibre is only 3.3 dB.<>
Keywords :
gallium arsenide; indium compounds; integrated optics; laser modes; optical fabrication; quantum well lasers; semiconductor growth; 1.52 micron; 3.3 dB; 8 mA; InGaAsP-InP; InGaAsP/lnP strained MQW laser; cleaved single-mode fibre; coupling loss; integrated mode size converter; planar buried-heterostructure laser; shadow masked growth; threshold current; vertical taper; Gallium compounds; Indium compounds; Integrated optics; Laser modes; Optical device fabrication; Quantum well lasers; Semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950340
