DocumentCode
759059
Title
InGaAsP/lnP strained MQW laser with integrated mode size converter using the shadow masked growth technique
Author
Moerman, I. ; D´Hondt, M. ; Vanderbauwhede, W. ; Van Daele, P. ; Demeester, P. ; Hunziker, W.
Author_Institution
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
452
Lastpage
454
Abstract
The authors report the realisation of a planar buried-heterostructure (PBH) strained multiquantum-well (MQW) laser emitting at 1.52 mu m with integrated vertical taper using the shadow masked growth (SMG) technique. The threshold current is 8 mA and the coupling loss to a cleaved single-mode fibre is only 3.3 dB.<>
Keywords
gallium arsenide; indium compounds; integrated optics; laser modes; optical fabrication; quantum well lasers; semiconductor growth; 1.52 micron; 3.3 dB; 8 mA; InGaAsP-InP; InGaAsP/lnP strained MQW laser; cleaved single-mode fibre; coupling loss; integrated mode size converter; planar buried-heterostructure laser; shadow masked growth; threshold current; vertical taper; Gallium compounds; Indium compounds; Integrated optics; Laser modes; Optical device fabrication; Quantum well lasers; Semiconductor growth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950340
Filename
375890
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