Title :
Integration process for photonic integrated circuits using plasma damage induced layer intermixing
Author :
Ooi, B.S. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
3/16/1995 12:00:00 AM
Abstract :
A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ion beam mixing; optical losses; optical planar waveguides; point defects; quantum well lasers; waveguide lasers; GaAs-AlGaAs; bandgap tuned lasers; extended cavity lasers; ion bombardment damage; passive waveguides; photonic integrated circuits; plasma damage; point defects; quantum-well intermixing process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950342
