DocumentCode
759076
Title
Integration process for photonic integrated circuits using plasma damage induced layer intermixing
Author
Ooi, B.S. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
31
Issue
6
fYear
1995
fDate
3/16/1995 12:00:00 AM
Firstpage
449
Lastpage
451
Abstract
A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion beam mixing; optical losses; optical planar waveguides; point defects; quantum well lasers; waveguide lasers; GaAs-AlGaAs; bandgap tuned lasers; extended cavity lasers; ion bombardment damage; passive waveguides; photonic integrated circuits; plasma damage; point defects; quantum-well intermixing process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950342
Filename
375892
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