DocumentCode
759193
Title
White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes
Author
Lee, Ching-Ting ; Yang, Ue-Zhi ; Lee, Chi-Sen ; Chen, Pou-Sung
Author_Institution
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan
Volume
18
Issue
19
fYear
2006
Firstpage
2029
Lastpage
2031
Abstract
We presented white emission of carbon-implanted InGaN-GaN light-emitting diodes. By using the blue light emitting from the InGaN-GaN multiple quantum well to excite the carbon-implanted Mg-doped GaN layer, the yellow-green light emission was obtained. To mix the blue light and the generated yellow-green light, white emission can be obtained in the monolithic InGaN-GaN light-emitting diodes
Keywords
III-V semiconductors; carbon; gallium compounds; indium compounds; ion implantation; light emitting diodes; quantum well devices; semiconductor doping; wide band gap semiconductors; InGaN-GaN light-emitting diodes; InGaN-GaN:C; Mg-doped GaN layer; carbon implantation; white light emission; Etching; Fingers; Gallium nitride; Implants; Infrared spectra; Light emitting diodes; Light sources; Quantum well devices; Research and development; Solid state circuits; Carbon implantation; InGaN–GaN multiple quantum well (MQW); wave mix; white light emission monolithic light-emitting diodes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.883322
Filename
1703625
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