Title :
White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes
Author :
Lee, Ching-Ting ; Yang, Ue-Zhi ; Lee, Chi-Sen ; Chen, Pou-Sung
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan
Abstract :
We presented white emission of carbon-implanted InGaN-GaN light-emitting diodes. By using the blue light emitting from the InGaN-GaN multiple quantum well to excite the carbon-implanted Mg-doped GaN layer, the yellow-green light emission was obtained. To mix the blue light and the generated yellow-green light, white emission can be obtained in the monolithic InGaN-GaN light-emitting diodes
Keywords :
III-V semiconductors; carbon; gallium compounds; indium compounds; ion implantation; light emitting diodes; quantum well devices; semiconductor doping; wide band gap semiconductors; InGaN-GaN light-emitting diodes; InGaN-GaN:C; Mg-doped GaN layer; carbon implantation; white light emission; Etching; Fingers; Gallium nitride; Implants; Infrared spectra; Light emitting diodes; Light sources; Quantum well devices; Research and development; Solid state circuits; Carbon implantation; InGaN–GaN multiple quantum well (MQW); wave mix; white light emission monolithic light-emitting diodes;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.883322
