InP-Based Transverse Junction Light-Emitting Diodes for White-Light Generation at Infrared Wavelengths

Author

Shi, J.-W. ; Hung, T.-J. ; Chen, Y.-Y. ; Wu, Y.-S. ; Lin, Wei ; Yang, Ying-Jay

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan

Volume

18

Issue

19

fYear

2006

Firstpage

2053

Lastpage

2055

Abstract

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs which have different center wavelengths. The wide optical 3-dB bandwidth achieved (~550 nm) is very stable and varies only negligibly with the bias current. For a bias current of 60 mA, a tremendously wide 3-dB optical bandwidth (580 nm, 1042 ~ 1622nm) has been demonstrated

Keywords

indium compounds; light emitting diodes; p-n junctions; spectral line broadening; InP; carrier distribution; optical bandwidth broadening; transverse p-n junction; white-light light-emitting-diode; Bandwidth; Light emitting diodes; Optical fiber communication; Optical pumping; Optical saturation; P-n junctions; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; Superluminescent diodes; Light-emitting diodes (LEDs); semiconductor optical amplifiers (SOAs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.883296

Filename

1703633