Enhancement of Performance of Si Nanocrystal Light-Emitting Diodes by Using Ag Nanodots

Author

Huh, Chul ; Shin, Jae-Heon ; Kim, Kyung-Hyun ; Choi, Chel-Jong ; Cho, Kwan Sik ; Hong, Jongcheol ; Sung, Gun Yong

Author_Institution

IT Convergence Technol. Res. Div., Daejeon

Volume

18

Issue

19

fYear

2006

Firstpage

2068

Lastpage

2070

Abstract

Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3~6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced

Keywords

elemental semiconductors; light emitting diodes; silicon; silver; Ag; Ag nanodots; Si; Si nanocrystal; light-emitting diodes; transmission electron microscope; Contacts; Electrons; Indium tin oxide; Light emitting diodes; Nanocrystals; Photonic band gap; Potential well; Power generation; Semiconductor films; Silicon; Ag nanodot; light-emitting diode (LED); silicon nanocrystal (nc-Si); silicon nitride;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.883249

Filename

1703638