Title :
Design trade-offs and evaluation of the performance: attainable by GaAs-Al0.3Ga0.7As asymmetric Fabry-Perot modulators
Author :
Zouganeli, P. ; Stevens, P.J. ; Atkinson, D. ; Parry, G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
5/1/1995 12:00:00 AM
Abstract :
We use a semi-empirical theoretical model to evaluate the performance ultimately attainable by normally-on asymmetric Fabry-Perot modulators (AFPMs) that incorporate GaAs-Al0.3Ga0.7As multiple quantum wells (MQW). Various optimization criteria are employed and the calculations address issues that involve both the micro-resonator design and the quantum-well region. Thus we evaluate the minimum required barrier width in order to compare between different well widths, and examine the final AFPM performance in many respects, considering not only the modulation itself but also the tolerances and the speed of the device. Finally, we proceed to the design of example devices where some characteristics have been specifically optimized
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; optical design techniques; optimisation; semiconductor device models; semiconductor quantum wells; GaAs-Al0.3Ga0.7As asymmetric Fabry-Perot modulators; GaAs-Al0.3Ga0.7As multiple quantum wells; GaAs-AlGaAs; MQW; design trade-offs; micro-resonator design; minimum required barrier width; normally-on; optimization criteria; performance; quantum-well region; semi-empirical theoretical model; well widths; Circuits; Design optimization; Fabry-Perot; Helium; Optical devices; Optical fiber networks; Optical interconnections; Quantum mechanics; Quantum well devices; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of