Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization

Author

Andrei, Cristian ; Gloria, Daniel ; Danneville, François ; Dambrine, Gilles

Author_Institution

Inst. d´´Electronique, de Microelectronique et de Nanotechnologie (IEMN), Villeneuve d´´Ascq

Volume

17

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

301

Lastpage

303

Abstract

In this letter, a de-embedding procedure is proposed to accurately extract the small signal equivalent circuit of advanced MOSFETs up to 110GHz. This efficient procedure is easy to implement using only one "open" dummy structure to de-embed the external parasitics (probe pads, interconnecting transmission line, and top-down metallic interconnections and via holes) and is in particular suitable for industrial online automatic test. The method has been validated in the case of 65-nm n-MOSFETs and is proved to be efficient up to 110GHz

Keywords

MOSFET; equivalent circuits; millimetre wave field effect transistors; nanotechnology; 110 GHz; 65 nm; S-parameters; advanced MOSFET; circuit modeling; de-embedding technique; deep-channel-MOSFET characterization; industrial online automatic test; millimeter wave measurements; open dummy structure; small signal equivalent circuit; transistor modeling; Equivalent circuits; Frequency; Impedance; Integrated circuit interconnections; MOSFETs; Metallization; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Probes; $S$-parameters; Circuit modeling; MOSFET; de-embedding; millimeter wave measurements; transistor modeling;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.892990

Filename

4141067