Title :
Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization
Author :
Andrei, Cristian ; Gloria, Daniel ; Danneville, François ; Dambrine, Gilles
Author_Institution :
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie (IEMN), Villeneuve d´´Ascq
fDate :
4/1/2007 12:00:00 AM
Abstract :
In this letter, a de-embedding procedure is proposed to accurately extract the small signal equivalent circuit of advanced MOSFETs up to 110GHz. This efficient procedure is easy to implement using only one "open" dummy structure to de-embed the external parasitics (probe pads, interconnecting transmission line, and top-down metallic interconnections and via holes) and is in particular suitable for industrial online automatic test. The method has been validated in the case of 65-nm n-MOSFETs and is proved to be efficient up to 110GHz
Keywords :
MOSFET; equivalent circuits; millimetre wave field effect transistors; nanotechnology; 110 GHz; 65 nm; S-parameters; advanced MOSFET; circuit modeling; de-embedding technique; deep-channel-MOSFET characterization; industrial online automatic test; millimeter wave measurements; open dummy structure; small signal equivalent circuit; transistor modeling; Equivalent circuits; Frequency; Impedance; Integrated circuit interconnections; MOSFETs; Metallization; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Probes; $S$-parameters; Circuit modeling; MOSFET; de-embedding; millimeter wave measurements; transistor modeling;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.892990
