Title :
A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology
Author :
Hallin, Joakim ; Kjellberg, Torgil ; Swahn, Thomas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
Abstract :
This paper presents a 4:1 multiplexer fabricated in InP double heterojunction bipolar transistor (DHBT) technology. The multiplexer works up to 165 Gb/s at a supply voltage of -3.2 V consuming 1.6 W. It is a half-rate multiplexer using a multi-phase clock architecture. The main design challenge was to ensure correct timing between clock and data signals
Keywords :
III-V semiconductors; bipolar digital integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; multiplexing equipment; -3.2 V; 1.6 W; 165 Gbit/s; DHBT technology; InP; clock signals; data signals; double heterojunction bipolar transistor technology; half-rate multiplexer; high-speed digital circuit; multiphase clock architecture; timing circuit; Clocks; DH-HEMTs; Delay; Double heterojunction bipolar transistors; Ethernet networks; Indium phosphide; Latches; Logic; Multiplexing; Timing; 4:1 multiplexer; InP DHBT; high-speed digital circuit;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.878114
