Title :
1/f noise of GaAs resistors on semi-insulating substrates
Author :
Forbes, Leonard ; Choi, Mun Seork ; Yan, Kelvin T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
A new theory is used to analyze the 1/f noise of GaAs resistors on semi-insulating substrates. It is demonstrated that this model can explain previously published results at moderately high frequencies for, in this example, resistive filaments on semi-insulating GaAs substrates. The model is based on a distributed equivalent circuit representation of the substrate, and shows that 1/f noise is a bulk phenomenon associated with the high resistivity substrates. The 1/f noise is not associated with number or mobility fluctuations in the channel, nor surface effects. One consequence of the theory is that in this particular instance Hooge´s parameter is in reality no parameter, but is given by a simple formula which has a simple physical interpretation as the ratio of two charges: the thermal charge developed across the substrate capacitance and the charge associated with ionized donors in the resistor channel
Keywords :
1/f noise; III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; resistors; semiconductor device models; semiconductor device noise; substrates; 1/f noise; GaAs; GaAs resistors; Hooge parameter; MESFET; distributed equivalent circuit representation; ionized donor charge; model; resistive filaments; semi-insulating substrates; substrate capacitance; thermal charge; Capacitance; Circuit noise; Conductivity; Dielectric substrates; Equivalent circuits; Fluctuations; Frequency; Gallium arsenide; Kelvin; Low-frequency noise; Resistors; Semiconductor device noise; Semiconductor materials; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
