DocumentCode :
759737
Title :
Design Methodology for a 40-GSamples/s Track and Hold Amplifier in 0.18- 
SiGe BiCMOS Technology
SiGe BiCMOS TechnologyAuthor :
Shahramian, Shahriar ; Carusone, Anthony Chan ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
Volume :
41
Issue :
10
fYear :
2006
Firstpage :
2233
Lastpage :
2240
Abstract :
A 40-GSamples/s track and hold amplifier (THA) is designed and fabricated in 0.18-mum SiGe BiCMOS and operates from a 3.6-V supply. The total power consumption is 540 mW with a chip area of 1.1 mm2 . Time domain measurements demonstrate 40-GHz sampling and S-parameter measurements show a 3-dB bandwidth of 43 GHz in track mode. For 19-GHz input signals, a total harmonic distortion of -27 dB at the 1dB compression point has been measured and a spurious-free dynamic range of 35 dB has been achieved
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; integrated circuit design; low noise amplifiers; sample and hold circuits; 0.18 micron; 3.6 V; 540 mW; BiCMOS technology; DSP-based equalizer; S-parameter measurements; SiGe; analog-to-digital converter; time domain measurements; track and hold amplifier; BiCMOS integrated circuits; Design methodology; Distortion measurement; Energy consumption; Germanium silicon alloys; Sampling methods; Scattering parameters; Semiconductor device measurement; Silicon germanium; Time measurement; Analog-to-digital converter; DSP-based equalizer; SiGe BiCMOS; equalization; track and hold amplifier;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2006.878111
Filename :
1703677
Link To Document :
