Title :
Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor Schottky diode structure
Author :
Salem, Ali F. ; Brennan, Kevin F.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the workings of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; hot carriers; indium compounds; metal-semiconductor-metal structures; semiconductor device models; transient analysis; InGaAs-InAlAs; MSM devices; blocking contact; hot carrier transport; metal-semiconductor Schottky diode structure; output terminal characteristics; rectifying contact; transient response; Charge carrier processes; Dark current; High definition video; Hot carriers; Indium compounds; Indium gallium arsenide; Schottky barriers; Schottky diodes; Thermionic emission; Transient response;
Journal_Title :
Electron Devices, IEEE Transactions on
