Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor Schottky diode structure

Author

Salem, Ali F. ; Brennan, Kevin F.

Author_Institution

Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

43

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

664

Lastpage

665

Abstract

The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the workings of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; hot carriers; indium compounds; metal-semiconductor-metal structures; semiconductor device models; transient analysis; InGaAs-InAlAs; MSM devices; blocking contact; hot carrier transport; metal-semiconductor Schottky diode structure; output terminal characteristics; rectifying contact; transient response; Charge carrier processes; Dark current; High definition video; Hot carriers; Indium compounds; Indium gallium arsenide; Schottky barriers; Schottky diodes; Thermionic emission; Transient response;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.485551

Filename

485551