Title :
A high-performance lateral PNP transistor structure
Author :
Gradinariu, Iulian ; Gontrand, Christian
Author_Institution :
Lab. de Phys. de la Mater., Villeurbanne, France
fDate :
4/1/1996 12:00:00 AM
Abstract :
This paper proposes a novel lateral PNP-type structure that is fully compatible with existing single-polysilicon BiCMOS processes and offers a valid alternative to shallow polysilicon emitter transistors. We have used both an analytical approach and a more accurate computer-aided design, obtaining 0.9 GHz and 4.4 GHz cutoff frequency for 2 μm and 0.8 μm minimum feature transistors, respectively
Keywords :
BiCMOS integrated circuits; bipolar transistors; circuit CAD; elemental semiconductors; integrated circuit design; silicon; 0.8 micron; 0.9 GHz; 2 micron; 4.4 GHz; Si; computer-aided design; cutoff frequency; lateral PNP transistor structure; minimum feature transistors; single-polysilicon BiCMOS processes; Annealing; BiCMOS integrated circuits; Cutoff frequency; Design automation; Etching; Implants; Impurities; Paper technology; Plasma applications; Poisson equations; Surface contamination;
Journal_Title :
Electron Devices, IEEE Transactions on
