• DocumentCode
    760103
  • Title

    On the charge storage and decay mechanism in silicon dioxide electrets

  • Author

    Olthuis, W. ; Bergveld, P.

  • Author_Institution
    MESA Res. Inst., Twente Univ., Enschede, Netherlands
  • Volume
    27
  • Issue
    4
  • fYear
    1992
  • fDate
    8/1/1992 12:00:00 AM
  • Firstpage
    691
  • Lastpage
    697
  • Abstract
    A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral electron traps to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The deprotonization of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO- as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret. Measurement results are presented, showing a considerable decrease in surface conductivity, after having grafted the SiO2 surface, resulting in covalently bonded, relatively long octadecyl silane chains
  • Keywords
    electrets; electron traps; microphones; silicon compounds; charge injection; charge storage; clustering; conductive hydrogen bonded network; decay mechanism; deprotonization; electrets; electrochemical reaction; microphones; neutral electron traps; octadecyl silane chains; stable trapped negative charge; surface conductivity; water molecules; Bonding; Conductivity; Electrets; Electron traps; Manufacturing; Micromachining; Microphones; Polymers; Silicon compounds; Surface discharges;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/14.155784
  • Filename
    155784