DocumentCode :
760103
Title :
On the charge storage and decay mechanism in silicon dioxide electrets
Author :
Olthuis, W. ; Bergveld, P.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Volume :
27
Issue :
4
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
691
Lastpage :
697
Abstract :
A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral electron traps to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The deprotonization of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO- as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret. Measurement results are presented, showing a considerable decrease in surface conductivity, after having grafted the SiO2 surface, resulting in covalently bonded, relatively long octadecyl silane chains
Keywords :
electrets; electron traps; microphones; silicon compounds; charge injection; charge storage; clustering; conductive hydrogen bonded network; decay mechanism; deprotonization; electrets; electrochemical reaction; microphones; neutral electron traps; octadecyl silane chains; stable trapped negative charge; surface conductivity; water molecules; Bonding; Conductivity; Electrets; Electron traps; Manufacturing; Micromachining; Microphones; Polymers; Silicon compounds; Surface discharges;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/14.155784
Filename :
155784
Link To Document :
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