Design of a Multifunctional Double-Active-Layer Thin-Film Transistor for Photosensing Applications

Author

Sang Youn Han ; Kyung Sook Jeon ; Seung Mi Seo ; Mi Seon Seo ; Suk-Won Jung

Author_Institution

LCD R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

66

Lastpage

68

Abstract

Photocurrent generation from infrared and thin-film transistor (TFT) driving properties were simultaneously achieved with a hydrogenated amorphous silicon/a-SiGe:H double-active-layer structure. The proposed double layer showed electrical performance degradation due to the large series resistance from the thick active structure. By reducing the thickness of a-SiGe:H only in the driving TFT, a compatible field-effect mobility of 0.29 cm²/V·s was achieved, which can fully drive the TFT. In the photosensor TFT, a higher photosensitivity was obtained with a thick a-SiGe:H layer. This implies that the multifunctional double active layer and new process effectively realized the two different properties at the same time.

Keywords

Ge-Si alloys; amorphous semiconductors; photodetectors; thin film transistors; SiGe:H; double active layer structure; field effect mobility; multifunctional double active layer; photocurrent generation; photosensing applications; thin film transistor; Amorphous silicon; Optical device fabrication; Optical variables measurement; Photonics; Resistance; Thin film transistors; Double active layer; photosensor; phototransistor; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2223811

Filename

6361449