Dynamic Compact Model of Self-Referenced Magnetic Tunnel Junction

Author

Azevedo, Joao ; Virazel, A. ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Alvarez-Herault, Jeremy ; Mackay, Ken

Author_Institution

Lab. d´Inf., de Robot. et de Microelectron. de Montpellier, Univ. of Montpellier, Montpellier, France

Volume

61

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

3877

Lastpage

3882

Abstract

Self-referenced magnetic tunnel junction (SR-MTJ) is a magnetic device that offers better characteristics when compared with its contenders. In this paper, electrical behavior of SR-MTJ was modeled using Verilog-AMS language based on reformulated magnetic physical equations. In addition, it incorporates all major characteristics of an MTJ, such as hysteresis and dependence of the resistance with respect to bias voltage and temperature. The model was designed to consider SR read approach and two modes of writing, direct and indirect. Electrical simulations were performed on an SR-MTJ enabling any read/write operation sequences. Results show that sample and hold read approach and both write modes were achieved.

Keywords

magnetic devices; magnetic tunnelling; magnetoelectronics; sample and hold circuits; SR-MTJ; Verilog-AMS language; bias voltage; magnetic device; magnetic physical equations; self-referenced magnetic tunnel junction; Frequency modulation; Heating; Magnetic switching; Magnetic tunneling; Magnetization; Mathematical model; Switches; Macro model; magnetic tunnel junction (MTJ); self-referenced MTJ (SR-MTJ);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2355418

Filename

6902783