• DocumentCode
    760821
  • Title

    AlGaAs/GaAs HBT for high-temperature applications

  • Author

    Fricke, Klaus ; Hartnagel, Hans L. ; Lee, Woo-Yong ; Wurfl, Joachim

  • Author_Institution
    Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
  • Volume
    39
  • Issue
    9
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    1977
  • Lastpage
    1981
  • Abstract
    A high-temperature N-p-n AlGaAs/GaAs HBT with a wide-bandgap emitter which can be operated up to a ambient temperature of 350°C is presented. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A useful common-emitter small-signal current gain hFE higher than 35 was measured in the range between room temperature and 350°C
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; stability; 350 degC; AlGaAs-GaAs; GaAs base layer; HBT; common-emitter small-signal current gain; high Al mole fraction; high-temperature applications; n-p-n device; temperature stability; wide-bandgap emitter; Artificial intelligence; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Operational amplifiers; Photonic band gap; Stability; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.155867
  • Filename
    155867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=760821