Title :
AlGaAs/GaAs HBT for high-temperature applications
Author :
Fricke, Klaus ; Hartnagel, Hans L. ; Lee, Woo-Yong ; Wurfl, Joachim
Author_Institution :
Inst. fuer Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fDate :
9/1/1992 12:00:00 AM
Abstract :
A high-temperature N-p-n AlGaAs/GaAs HBT with a wide-bandgap emitter which can be operated up to a ambient temperature of 350°C is presented. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A useful common-emitter small-signal current gain hFE higher than 35 was measured in the range between room temperature and 350°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; stability; 350 degC; AlGaAs-GaAs; GaAs base layer; HBT; common-emitter small-signal current gain; high Al mole fraction; high-temperature applications; n-p-n device; temperature stability; wide-bandgap emitter; Artificial intelligence; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Operational amplifiers; Photonic band gap; Stability; Temperature distribution; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
