Title :
Heterojunction bipolar transistor design for power applications
Author :
Gao, Guang-bo ; Morkoc, Hadis ; Chang, Mau-Chung Frank
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
Design rules of AlGaAs-GaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors. Concepts discussed include the tradeoff between power gain, output power, power-added efficiency in the layout design, layer structure selection, and thermal design
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; AlGaAs-GaAs; HBT; design rules; heterojunction bipolar transistors; layer structure selection; layout design; output power; power applications; power gain; power-added efficiency; thermal design; Frequency; Gallium arsenide; Hafnium; Heterojunction bipolar transistors; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Pulse amplifiers; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
