Two-dimensional analysis of short-channel delta-doped GaAs MESFETs

Author

Tian, Hong ; Kim, Ki Wook ; Littlejohn, Michael A. ; Bedair, Salah M. ; Witkowski, Larry C.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Rayleigh, NC, USA

Volume

39

Issue

9

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

1998

Lastpage

2006

Abstract

Key design parameters for delta-doped GaAs MESFETs, such as delta doping profile, top layer background doping density, and scaling of lateral feature size, are investigated using a two-dimensional numerical simulation. A three-region (delta-doped conducting channel, top layer, and substrate) velocity-field relation is implemented in the model as appropriate for the particular device structure which is simulated. Simulation results show excellent agreement with a fabricated 0.5-μm gate-length delta-doped GaAs MESFETs based on atomic layer epitaxy material. An extrinsic transconductance of 370 mS/mm and a drain-source current of 270 mA/mm are obtained for typical devices, and the maximum transconductance is as high as 400 mS/mm. These are the best DC results yet reported for 0.5-μm gate-length delta-doped GaAs MESFETs. Considerations of design and optimization are discussed in terms of threshold voltage sensitivity, transconductance, current drive capability, and cutoff frequency, based on both simulation and experiment results

Keywords

III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; semiconductor device models; semiconductor doping; 0.5 micron; 2D analysis; 370 to 400 mS; GaAs; atomic layer epitaxy material; current drive capability; cutoff frequency; delta doping profile; delta-doped conducting channel; design parameters; lateral feature size; model; scaling; short-channel; submicron gate length; threshold voltage sensitivity; top layer background doping density; transconductance; two-dimensional numerical simulation; Atomic layer deposition; Conducting materials; Doping profiles; Epitaxial growth; Gallium arsenide; MESFETs; Numerical simulation; Semiconductor process modeling; Substrates; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.155870

Filename

155870