Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With $f_{T}/f_{\\rm MAX} = \\hbox {450/510} \\hbox {GHz}$

Author

Xu, Huiming ; Iverson, Eric W. ; Liao, Chi-Chih ; Cheng, K.Y. ; Feng, Milton

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

33

Lastpage

35

Abstract

A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated f_T/f_MAX = 450/510 GHz for a 0.3 × 2 μm² device.

Keywords

aluminium compounds; electric fields; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; AlInP-AlGaAsSb-InP; base transit time reduction; built-in electric field; composition-graded type-II DHBT; device speed improvement; double heterojunction bipolar transistor; frequency 450 GHz; frequency 510 GHz; molecular beam epitaxy; Current measurement; Double heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Metals; Performance evaluation; AlGaAsSb; InP; double heterojunction bipolar transistor (DHBT); millimeter wave;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2224090

Filename

6361454