Optical control of 14 GHz MMIC oscillators based on InAlAs/InGaAs HBTs with monolithically integrated optical waveguides

Author

Freeman, Paul ; Zhang, Xiangkun ; Vurgaftman, Igor ; Singh, Jasprit ; Bhattacharya, Pallab

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

43

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

373

Lastpage

379

Abstract

An In_0.52Al_0.48As/In_0.53Ga_0.47As heterojunction bipolar transistor (HBT) with a novel integrated optical waveguide for light input has been developed. Detailed modeling is used to validate the design and simulate the coupling of light from the waveguide into the device. Fabricated waveguide-HBT devices exhibited cutoff frequencies of f_T=32 GHz and f_max=48 GHz with 56% of the guided light being converted to photocurrent. Fabricated MMIC oscillators operating at 13.9 GHz exhibited direct optical controllability in the form of optical tuning and injection locking. This is the highest reported frequency for direct optical injection locking in an HBT-based oscillator

Keywords

III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; integrated optoelectronics; microwave oscillators; optical waveguides; 14 GHz; In_0.52Al_0.48As-In_0.53Ga_0.47As; InAlAs/InGaAs HBTs; MMIC oscillators; heterojunction bipolar transistor; monolithically integrated optical waveguides; optical control; optical injection locking; optical tuning; photocurrent; Cutoff frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Injection-locked oscillators; Integrated optics; MMICs; Optical control; Optical coupling; Optical waveguides;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.485649

Filename

485649