Title :
Optical control of 14 GHz MMIC oscillators based on InAlAs/InGaAs HBTs with monolithically integrated optical waveguides
Author :
Freeman, Paul ; Zhang, Xiangkun ; Vurgaftman, Igor ; Singh, Jasprit ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
An In0.52Al0.48As/In0.53Ga0.47 As heterojunction bipolar transistor (HBT) with a novel integrated optical waveguide for light input has been developed. Detailed modeling is used to validate the design and simulate the coupling of light from the waveguide into the device. Fabricated waveguide-HBT devices exhibited cutoff frequencies of fT=32 GHz and fmax=48 GHz with 56% of the guided light being converted to photocurrent. Fabricated MMIC oscillators operating at 13.9 GHz exhibited direct optical controllability in the form of optical tuning and injection locking. This is the highest reported frequency for direct optical injection locking in an HBT-based oscillator
Keywords :
III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; integrated optoelectronics; microwave oscillators; optical waveguides; 14 GHz; In0.52Al0.48As-In0.53Ga0.47 As; InAlAs/InGaAs HBTs; MMIC oscillators; heterojunction bipolar transistor; monolithically integrated optical waveguides; optical control; optical injection locking; optical tuning; photocurrent; Cutoff frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Injection-locked oscillators; Integrated optics; MMICs; Optical control; Optical coupling; Optical waveguides;
Journal_Title :
Electron Devices, IEEE Transactions on
