Title :
Two-dimensionally confined injection phenomena at low temperatures in sub-10-nm-thick SOI insulated-gate p-n-junction devices
Author_Institution :
Nano-electron. Lab., NTT LSI Labs., Kanagawa, Japan
fDate :
3/1/1996 12:00:00 AM
Abstract :
This paper describes two-dimensionally confined carrier injection phenomena in thin-SOI insulated-gate pn-junction devices fabricated on SIMOX substrates. At 28 K conductance shows step-like anomalies due to the manifestation of a two-dimensional subband system in an 8-nm-thick-SOI structure at a low gate bias. Conductance shows an oscillation-like feature at a high gate bias because of the injection mode change. These effects are examined by theoretical simulations based on quantum mechanics
Keywords :
MOSFET; SIMOX; buried layers; carrier density; cryogenic electronics; electric admittance; insulated gate bipolar transistors; semiconductor device models; 10 nm; 28 K; SIMOX substrates; SOI insulated-gate p-n-junction devices; anode-common configuration; cathode-common configuration; conductance oscillation; conductance step-like anomalies; low temperature; physical model; quantum mechanics; theoretical simulation; two-dimensional subband system; two-dimensionally confined carrier injection phenomena; ultrathin SOI MOSFET; Carrier confinement; Cathodes; Charge carrier processes; Current measurement; Insulation; MOSFET circuits; Quantum mechanics; Silicon; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
