DocumentCode
761081
Title
GexSi1-x/silicon inversion-base transistors: theory of operation
Author
Taft, Robert C. ; Plummer, James D.
Author_Institution
Motorola Inc., Austin, TX, USA
Volume
39
Issue
9
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2108
Lastpage
2118
Abstract
A theoretical study of the device characteristics of the Gex Si1-x/silicon inversion-base transistor (BICFET) is presented. This transistor uses the space charge of holes in a modulation-doped inversion channel to control vertical electron transport. This study is of interest not only because of the unique interaction of transport mechanisms in the BICFET but also because the BICFET is very well suited to the GexSi1-x/Si system, and offers substantial performance advantages over the BJT. The device characteristics presented are based on a numerical and analytical analysis using the drift-diffusion formalism. The effects that quantum confinement and non-semi-classical transport have on this structure are presented. The authors conclude with a comparison between the Gex Si1-x/Si BICFET and GexSi1-x/Si HBT
Keywords
Ge-Si alloys; bipolar transistors; field effect transistors; semiconductor device models; semiconductor materials; silicon; BICFET; GexSi1-x-Si; analytical analysis; device characteristics; drift-diffusion formalism; interaction of transport mechanisms; inversion-base transistors; modulation-doped inversion channel; numerical analysis; operation; performance; quantum confinement; semiconductors; space charge of holes; vertical electron transport; Bipolar transistors; FETs; Fabrication; MOSFETs; Research and development; Silicon devices; Space technology; Substrates; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.155893
Filename
155893
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