Title :
DC characteristics of submicrometer CMOS inverters operating over the whole temperature range of 4.2-300 K
Author :
Gutiérrez-D, Edmundo A. ; Deferm, Ludo ; Declerck, Gilbert
Author_Institution :
IMEC, Leuven, Belgium
fDate :
9/1/1992 12:00:00 AM
Abstract :
The temperature dependence of the MOSFET parameters as well as the freeze-out and carrier multiplication effects on the DC characteristics of submicrometer CMOS inverters, operated over the whole ambient temperature range of 4.2-300 K, are discussed. The observed degradation of the inverter performance below 50 K is attributed to freeze-out and carrier multiplication effects
Keywords :
CMOS integrated circuits; logic gates; 4.2 to 300 K; DC characteristics; MOSFET parameters; carrier freeze out; carrier multiplication effects; freeze-out; performance degradation; submicrometer CMOS inverters; submicron CMOS; temperature dependence; temperature range; CMOS technology; Degradation; Inverters; MOS devices; MOSFET circuits; Switching circuits; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
