• DocumentCode
    761131
  • Title

    A simple physical model including velocity overshoot for n-channel heterostructure FETs

  • Author

    Fulkerson, David E.

  • Author_Institution
    Honeywell Syst. & Res. Center, Bloomington, MN, USA
  • Volume
    39
  • Issue
    9
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    2186
  • Lastpage
    2188
  • Abstract
    A one-dimensional DC model is constructed for n-channel heterostructure FETs. The model includes the velocity versus field relationships, carrier diffusion, and velocity overshoot. The model and experimental data imply that the drain current increases by about 27% by velocity overshoot when the gate length is 1 μm
  • Keywords
    field effect transistors; semiconductor device models; 1 micron; carrier diffusion; drain current; experimental data; gate length; model; n-channel HFET; n-channel heterostructure FETs; one-dimensional DC model; physical model; velocity overshoot; velocity versus field relationships; Acoustical engineering; Electrons; Equations; HEMTs; MODFETs; Optical noise; Phase noise; Resonance; Resonant tunneling devices; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.155898
  • Filename
    155898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=761131