Title :
A simple analytical model of the tunnel MIS emitter Auger transistor
Author :
Vexler, Mikhail I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
4/1/1995 12:00:00 AM
Abstract :
A simple analytical model of the tunnel MIS emitter transistor is developed, taking into account the Auger ionization effect. The proposed model predicts the features of DC performance of this device arising from Auger ionization. This model was then used to compute typical characteristics for an Al/SiO2/n-Si Auger transistor. Generated DC characteristics are in satisfactory agreement with recently published experimental results
Keywords :
Auger effect; MIS devices; bipolar transistors; impact ionisation; semiconductor device models; tunnel transistors; Al-SiO2-Si; Auger ionization effect; DC characteristics; DC performance; analytical model; tunnel MIS emitter Auger transistor; Analytical models; Character generation; DC generators; Electrons; Impact ionization; Insulation; Metal-insulator structures; Predictive models; Space charge; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
