Title :
Performance capabilities of HBT devices and circuits for satellite communication
Author :
Fricke, Klaus ; Gatti, Giuliano ; Hartnagel, Hans L. ; Krozer, Viktor ; Würfl, Joachim
Author_Institution :
Inst. fuer Hochfrequenztechnik, Tech. Hochschule Darmstadt, Germany
fDate :
6/1/1992 12:00:00 AM
Abstract :
The heterojunction bipolar transistor (HBT) performance is studied, with emphasis on its possible utilization in satellite power amplifiers. After a review of the requirements of satellite power amplifiers, the suitability of HBTs is discussed in depth, including the output power capabilities, the realizable power-added efficiency and linearity, reliability considerations, and circuit aspects. Models and simulation tools for HBTs in power amplifiers are discussed, and the results obtained so far are given. A comparison of realized HBTs and various FET devices and circuits demonstrates that the HBT is a promising device for applications in satellite power amplifiers. The HBT will be a preferable device for microwave power amplification if the problems concerning the reliability can be solved, and further investigations will be performed to obtain larger devices with higher rated output power
Keywords :
heterojunction bipolar transistors; power amplifiers; satellite links; solid-state microwave circuits; solid-state microwave devices; HBT devices; heterojunction bipolar transistor; linearity; microwave power amplification; output power capabilities; realizable power-added efficiency; reliability; satellite communication; satellite power amplifiers; simulation tools; Circuits; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Linearity; Microwave devices; Power amplifiers; Power generation; Satellite communication; Space technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
