Performance capabilities of HBT devices and circuits for satellite communication

Author

Fricke, Klaus ; Gatti, Giuliano ; Hartnagel, Hans L. ; Krozer, Viktor ; Würfl, Joachim

Author_Institution

Inst. fuer Hochfrequenztechnik, Tech. Hochschule Darmstadt, Germany

Volume

40

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1205

Lastpage

1214

Abstract

The heterojunction bipolar transistor (HBT) performance is studied, with emphasis on its possible utilization in satellite power amplifiers. After a review of the requirements of satellite power amplifiers, the suitability of HBTs is discussed in depth, including the output power capabilities, the realizable power-added efficiency and linearity, reliability considerations, and circuit aspects. Models and simulation tools for HBTs in power amplifiers are discussed, and the results obtained so far are given. A comparison of realized HBTs and various FET devices and circuits demonstrates that the HBT is a promising device for applications in satellite power amplifiers. The HBT will be a preferable device for microwave power amplification if the problems concerning the reliability can be solved, and further investigations will be performed to obtain larger devices with higher rated output power

Keywords

heterojunction bipolar transistors; power amplifiers; satellite links; solid-state microwave circuits; solid-state microwave devices; HBT devices; heterojunction bipolar transistor; linearity; microwave power amplification; output power capabilities; realizable power-added efficiency; reliability; satellite communication; satellite power amplifiers; simulation tools; Circuits; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Linearity; Microwave devices; Power amplifiers; Power generation; Satellite communication; Space technology;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.141353

Filename

141353