Evaluation of three-level rectifiers for low-voltage utility applications

Author

Teichmann, Ralph ; Malinowski, Mariusz ; Bernet, Steffen

Author_Institution

GE Global Res., Niskayuna, NY, USA

Volume

52

Issue

2

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

471

Lastpage

481

Abstract

This paper evaluates the benefits of three-level topologies as alternatives to two-level topologies in low-voltage converters primarily operated in rectifier mode. The main evaluation aspects are input filter size, semiconductor losses, maximum switching frequency, part count, initial cost, and life cycle cost. Semiconductor loss characteristics of various three-level topologies are discussed. A detailed converter comparison is based on a 100-kW 400-V_rms rectifier using commercially available Si insulated gate bipolar transistor modules.

Keywords

costing; filters; insulated gate bipolar transistors; rectifying circuits; switching convertors; 100 kW; Si; cost evaluation; filter size; insulated gate bipolar transistor; life cycle cost; low-voltage converter; low-voltage utility application; multilevel converter; rectifier mode; semiconductor loss; switching frequency; three-level rectifier; Costs; Filters; Harmonic distortion; IEC standards; Insulated gate bipolar transistors; Matrix converters; Power conversion; Rectifiers; Switching frequency; Topology; Filter; losses; multilevel converter; rectifier;

fLanguage

English

Journal_Title

Industrial Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0278-0046

Type

jour

DOI

10.1109/TIE.2005.843908

Filename

1413554