Title :
Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
Author :
Privat, A. ; Touboul, A.D. ; Michez, A. ; Bourdarie, S. ; Vaille, J.R. ; Wrobel, F. ; Arinero, R. ; Chatry, N. ; Chaumont, G. ; Lorfevre, E. ; Saigne, F.
Author_Institution :
Univ. Montpellier 2, Montpellier, France
Abstract :
Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.
Keywords :
failure analysis; power MOSFET; radiation hardening (electronics); semiconductor device reliability; SEGR triggering; electrical characterizations; heavy ion impact localization; latent defect formation; latent defects-induced reliability degradation quantification; post-irradiation gate stress; post-irradiation-gate-stress; power MOSFET failure mechanisms; power MOSFET space qualification; Degradation; Electric breakdown; Electric fields; MOSFET; Radiation effects; Reliability; Heavy ion; SEGR; latent defect; post-irradiation-gate-stress; power MOSFET; reliability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2287974
