• DocumentCode
    761618
  • Title

    Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

  • Author

    Tseng, Chi-Che ; Chou, Shu-Ting ; Chen, Yi-Hao ; Chen, Cheng-Nan ; Lin, Wei-Hsun ; Chung, Tung-Hsun ; Lin, Shih-Yen ; Chiu, Pei-Chin ; Chyi, Jen-Inn ; Wu, Meng-Chyi

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    20
  • Issue
    14
  • fYear
    2008
  • fDate
    7/15/2008 12:00:00 AM
  • Firstpage
    1240
  • Lastpage
    1242
  • Abstract
    Ten-period InAs-GaAs quantum-dot (QD) infrared photodetectors grown under different In adatom supply procedures are investigated. Two In adatom supply procedures of In shutter 1) always opened and 2) periodically opened/closed are adopted in this letter. Larger QD sizes in both height and diameter and more uniform size distribution are observed for samples grown under an In shutter periodically opened/closed condition. The device with QDs grown under the In shutter always opened condition has revealed shorter detection wavelengths and enhanced normal incident absorption. The phenomenon shows that beside the increase of energy difference between confinement states, smaller QD sizes would also enhance the normal incident absorption predicted for the theoretically zero-dimensional QD structures.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor growth; semiconductor quantum dots; InAs-GaAs; adatom supply procedures; confinement states; enhanced normal-incident absorption; optical shutter; quantum-dot growth; quantum-dot infrared photodetectors; zero-dimensional QD structures; Atomic measurements; Dark current; Electromagnetic wave absorption; Gallium arsenide; Gratings; Photodetectors; Photoluminescence; Quantum dots; Quantum well devices; Temperature; Quantum dot (QD); quantum-dot infrared photodetector (QDIP);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.926020
  • Filename
    4547917