Title :
Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing
Author :
Amusan, Oluwole A. ; Massengill, Lloyd W. ; Baze, Mark P. ; Sternberg, Andrew L. ; Witulski, Arthur F. ; Bhuva, Bharat L. ; Black, Jeffrey D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
Circuit and 3D technology computer aided design mixed-mode simulations show that the single event upset vulnerability of 130- and 90-nm hardened latches to low linear energy transfer (LET) particles is due to charge sharing between multiple nodes as a result of a single ion strike. The low LET vulnerability of the hardened latches is verified experimentally.
Keywords :
electronic design automation; radiation hardening (electronics); semiconductor device reliability; charge sharing; computer aided design; deep-submicrometer technologies; hardened latches; linear energy transfer particles; mixed-mode simulations; single event upsets; single ion strike; Alpha particles; charge sharing; dual interlocked cell (DICE) latch; neutrons; parasitic bipolar transistor; radiation hardened by design; single event circuit characterization; single event upset (SEU);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2008.2000892
