DocumentCode :
761704
Title :
High-frequency differential piezoelectric photoacoustic investigation of ion-implanted
Author :
Zuccon, Johnny F. ; Mandelis, Andreas
Author_Institution :
Opt. Recording Corp., Toronto, Ont., Canada
Volume :
35
Issue :
1
fYear :
1988
Firstpage :
5
Lastpage :
13
Abstract :
An exploratory application of position-modulation photoacoustic imaging of ion-implanted
Keywords :
elemental semiconductors; ion implantation; laser beam applications; photoacoustic effect; silicon; ultrasonic materials testing; 0.2 MHz; 1.06 micron; Nd/sup 3+/:YAG laser; YAG:Nd; YAl5O12:Nd; differential piezoelectric photoacoustic investigation; ion-implanted; ion-implanted parameters; laser beam position modulation; semiconductor; semiconductor processing; ultrasonic materials testing; Acoustic signal detection; Condition monitoring; Implants; Laser beams; Microphones; Optical modulation; Probes; Semiconductor lasers; Semiconductor materials; Silicon;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/58.4142
Filename :
4142
Link To Document :
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