DocumentCode
761767
Title
Microcavities with field emitters sealed by silicon wafer bonding
Author
Stengl, R. ; Meul, H.W. ; Honlein, W.
Author_Institution
Siemens AG, Res. Labs., Munchen, Germany
Volume
27
Issue
24
fYear
1991
Firstpage
2209
Lastpage
2210
Abstract
A method of fabricating micrometre-sized field emission diodes is described. The devices use silicon field emitters that have been grown by selective epitaxy into 0.9 mu m sized contact holes in a 1 mu m thick field oxide. The anode of the device structure is a silicon wafer directly bonded to the field oxide.
Keywords
cathodes; diodes; electron field emission; semiconductor technology; vacuum microelectronics; vapour phase epitaxial growth; 0.9 to 1 micron; Si emitters; Si wafer bonding; contact holes; fabrication; field oxide; microcavities; micrometre-sized field emission diodes; miniature vacuum diodes; sealed field emitters; selective epitaxy; wafer direct bonding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911366
Filename
109490
Link To Document