Title :
Microcavities with field emitters sealed by silicon wafer bonding
Author :
Stengl, R. ; Meul, H.W. ; Honlein, W.
Author_Institution :
Siemens AG, Res. Labs., Munchen, Germany
Abstract :
A method of fabricating micrometre-sized field emission diodes is described. The devices use silicon field emitters that have been grown by selective epitaxy into 0.9 mu m sized contact holes in a 1 mu m thick field oxide. The anode of the device structure is a silicon wafer directly bonded to the field oxide.
Keywords :
cathodes; diodes; electron field emission; semiconductor technology; vacuum microelectronics; vapour phase epitaxial growth; 0.9 to 1 micron; Si emitters; Si wafer bonding; contact holes; fabrication; field oxide; microcavities; micrometre-sized field emission diodes; miniature vacuum diodes; sealed field emitters; selective epitaxy; wafer direct bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911366
