Title :
HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design
Author :
Miyake, M. ; Navarro, D. ; Feldmann, Uwe ; Mattausch, Hans Jurgen ; Kojima, T. ; Ogawa, Tomomi ; Ueta, Takashi
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashihiroshima, Japan
Abstract :
A physics-based compact model of insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation is presented. The compact model is constructed as a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) part and a bipolar junction transistor (BJT) part with a conductivity-modulated base resistance in between them and is named “HiSIM-IGBT.” The model considers the potential distribution from the MOSFET channel to the two BJT junctions explicitly by solving important internal node potentials self-consistently. The IGBT output current at the collector terminal is governed by the base resistance of the bipolar part and the MOSFET characteristics, which is confirmed to be described accurately. The model is verified to accurately reproduce measured transient behaviors of switching test circuits which are basic components of practically used power electronic circuits.
Keywords :
elemental semiconductors; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; silicon; BJT junctions; HiSIM-IGBT; MOSFET channel; Si; base resistance; bipolar junction transistor; collector terminal; compact silicon-IGBT model; conductivity-modulated base resistance; insulated-gate bipolar transistors; physics-based compact model; power electronic circuit design; power electronic circuit simulation; switching test circuits; transient behaviors; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; MOSFET circuits; Mathematical model; Resistance; Semiconductor device modeling; Circuit simulation; Hiroshima University STARC IGFET Model (HiSIM); Simulation Program with Integrated Circuit Emphasis (SPICE); compact model; insulated-gate bipolar transistor (IGBT); nonquasi-static (NQS); surface potential; tail current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2226181
