• DocumentCode
    762634
  • Title

    A wide-band, low-power, high slew rate voltage-feedback operational amplifier

  • Author

    Moraveji, Farhood

  • Author_Institution
    Nat. Semicond. Corp., Santa Clara, CA, USA
  • Volume
    31
  • Issue
    1
  • fYear
    1996
  • fDate
    1/1/1996 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    16
  • Abstract
    A wide-band low-power voltage-feedback operational amplifier on a 3 GHz, 40 V complementary bipolar technology is described. The class AB input stage takes advantage of some current-boost transistors which enhance and linearize the slew-rate during large-signal operation without increasing the power consumption. The triple-buffered output stage provides 100 mA of load current maintaining good linearity. Since the circuit design and technology development were concurrent, several different circuits were stepped into one wafer to fully characterize the process and identify the best product candidates. The low-current version of this chip has a quiescent current of 2.5 mA, 2000 V/μs slew rate and gain bandwidth of 110 MHz. The medium-current version draws only 6.5 mA of current at the same supply voltage while the slew rate increases to 3500 V/μs and bandwidth to 210 MHz. Both parts are operational from +/-2.75 V to +/-18 V supply range. Die size is 51 mils by 76 mils on a poly-emitter CB process
  • Keywords
    bipolar analogue integrated circuits; feedback amplifiers; operational amplifiers; wideband amplifiers; -18 to 18 V; 100 mA; 110 MHz; 2.5 mA; 210 MHz; 3 GHz; 40 V; 6.5 mA; class AB input stage; complementary bipolar technology; current-boost transistors; gain bandwidth; large-signal operation; load current; poly-emitter CB process; power consumption; quiescent current; slew rate; supply voltage; triple-buffered output stage; voltage-feedback operational amplifier; wideband amplifiers; Bandwidth; Broadband amplifiers; Circuit synthesis; Drives; Energy consumption; Linearity; Mirrors; Operational amplifiers; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.485839
  • Filename
    485839