Low-Frequency Series-Resistance Analytical Modeling of Three-Dimensional Metal–Insulator–Metal Capacitors

Author

Bajolet, Aurélie ; Clerc, Raphaël ; Pananakakis, G. ; Tsamados, Dimitrios ; Picollet, Eric ; Ségura, Noël ; Giraudin, Jean-Christophe ; Delpech, Philippe ; Montès, Laurent ; Ghibaudo, Gérard

Author_Institution

Inst. de Microelectronique, d´´Electromagnetisme et de Photonique, Grenoble Cedex

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

742

Lastpage

751

Abstract

This paper discusses the optimization of series resistance of nonplanar metal-insulator-metal capacitor, i.e., an original 3-D capacitor with a capacitance density of 35 nF/mm², used in very large scale integration. A fully analytical and physically based model of its series resistance versus material and geometrical parameters has been developed, in excellent agreement with both 3-D numerical simulations and experiments. Based on the modeling results, possible design strategies of series-resistance reduction are suggested; showing a reduction of the series resistance by approximately a factor of four, without any degradation of the capacitance density

Keywords

MIM devices; VLSI; capacitors; numerical analysis; optimisation; 3D metal-insulator-metal capacitors; MIM devices; low-frequency analytical modeling; metal-insulator-metal device; nonplanar metal-insulator-metal capacitor; numerical simulations; optimization; parameter measurement; series resistance; series-resistance analytical modeling; trench capacitor; very large scale integration; Aluminum oxide; Analytical models; Application specific integrated circuits; Capacitance; Filtering; GSM; Insulation; MIM capacitors; MIM devices; Numerical simulation; $S$-parameter measurement; Design methodology; metal–insulator–metal (MIM) devices; modeling; trench capacitor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.891851

Filename

4142869