Title :
Linear Cofactor Difference Extrema of MOSFET´s Drain–Current and Application to Parameter Extraction
Author :
He, Jin ; Bian, Wei ; Tao, Yadong ; Liu, Feng ; Song, Yan ; Hu, Jinhua ; Zhang, Xing ; Wu, Wen ; Wang, Ting ; Chan, Mansun
Author_Institution :
Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen
fDate :
4/1/2007 12:00:00 AM
Abstract :
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their application to extract MOSFET parameters are presented in this brief. The extrema of drain-current are obtained by applying the linear cofactor difference operator to the drain-current versus gate voltage curve in the linear region. These extrema are directly used to find the threshold voltage and the mobility of a MOSFET. This method has been tested using data from experimentally fabricated MOSFETs and by simulating results through the device simulator DESSIS-ISE. The results agree well with those obtained by the standard second-derivative approach, which demonstrates the validity of the method presented. The advantages and disadvantages of this method are also discussed
Keywords :
MOSFET; semiconductor device manufacture; DESSIS-ISE; MOSFET drain-current; device simulator; drain-current linear cofactor difference; gate voltage curve; mobility degradation; parameter extraction; threshold voltage; Computer science; Degradation; Extrapolation; Helium; MOSFET circuits; Mathematics; Microelectronics; Parameter extraction; Testing; Threshold voltage; Drain–current linear cofactor difference; MOSFET; mobility degradation; parameter extraction method; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.891249
